The FDN336P is a bulk-packaged N-channel MOSFET with a DC rated voltage of -20V and a power dissipation of 500mW. It has a continuous drain current of 1.2A and a drain to source resistance of 270mR. The device is lead free and compliant with Reach SVHC regulations. The FDN336P is suitable for a variety of applications where a high current and low resistance are required.
Current Rating-1.3A
Power500mW
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Technical Specifications
Rochester Electronics FDN336P technical specifications.
General
| Continuous Drain Current (ID) | 1.2A |
| Current Rating | -1.3A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDN336P Datasheet
Download the complete datasheet for Rochester Electronics FDN336P to view detailed technical specifications.
No datasheet is available for this part.