The FDN338P is a junction field-effect transistor with a continuous drain current rating of 1.6A and a drain to source breakdown voltage of -20V. It is packaged in a SOT-23-3 package and has a power dissipation of 500mW. The device is lead free and compliant with RoHS. The FDN338P is suitable for use in a variety of applications where a low-power, high-current transistor is required.
PackageSOT-23-3
Current Rating-1.6A
Power500mW
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Technical Specifications
Rochester Electronics FDN338P technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 1.6A |
| Current Rating | -1.6A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDN338P Datasheet
Download the complete datasheet for Rochester Electronics FDN338P to view detailed technical specifications.
No datasheet is available for this part.