P-Channel PowerTrench® MOSFET featuring a -30V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of -1.3A. Offers a low Drain to Source Resistance of 180mΩ. Designed for efficient power management with a Gate to Source Voltage (Vgs) rating of 25V and 500mW power dissipation. This lead-free component includes 150pF input capacitance and is supplied in cut tape packaging, meeting Reach SVHC compliance.
Current Rating-1.3A
Power500mW
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Technical Specifications
Rochester Electronics FDN352AP technical specifications.
General
| Continuous Drain Current (ID) | -1.3A |
| Current Rating | -1.3A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDN352AP Datasheet
Download the complete datasheet for Rochester Electronics FDN352AP to view detailed technical specifications.
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