Rochester Electronics
FDN357N
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ
Current Rating1.9A
Power500mW
Quick Jump:
Technical Specifications
Rochester Electronics FDN357N technical specifications.
General
| Continuous Drain Current (ID) | 1.9A |
| Current Rating | 1.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 235pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDN357N Datasheet
Download the complete datasheet for Rochester Electronics FDN357N to view detailed technical specifications.
No datasheet is available for this part.