The FDS4470 is a 40V N-Channel MOSFET with a continuous drain current of 12.5A and a drain to source breakdown voltage of -100V. It has a drain to source resistance of 9mR and a power dissipation of 2.5W. The device is packaged in a lead-free SOIC package and is compliant with Reach SVHC regulations. It can operate over a wide temperature range and is suitable for high-current applications.
PackageSOIC
Current Rating12.5A
Power2.5W
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Technical Specifications
Rochester Electronics FDS4470 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12.5A |
| Current Rating | 12.5A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance | 2.66nF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS4470 Datasheet
Download the complete datasheet for Rochester Electronics FDS4470 to view detailed technical specifications.
No datasheet is available for this part.