The FDS6614A is a 30V N-Channel JFET with a continuous drain current of 9.3A and a drain to source breakdown voltage of 30V. It features a drain to source resistance of 18mR and a power dissipation of 2.5W. The device is packaged in a lead-free SO-8 package and is suitable for bulk packaging. The FDS6614A operates over a temperature range of -55°C to 150°C.
PackageSOIC
Current Rating9.3A
Power2.5W
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Technical Specifications
Rochester Electronics FDS6614A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.3A |
| Current Rating | 9.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.16nF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 2.5W |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS6614A Datasheet
Download the complete datasheet for Rochester Electronics FDS6614A to view detailed technical specifications.
No datasheet is available for this part.