The FDS6630A is a 30V 6.5A N-Channel JFET with a drain to source breakdown voltage of 30V and a gate to source voltage of 20V. It features a power dissipation of 2.5W and is packaged in a lead free SO-8 package. The device is compliant with Reach SVHC regulations and is available in bulk packaging.
PackageSOIC
Current Rating6.5A
Power2.5W
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Technical Specifications
Rochester Electronics FDS6630A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.5A |
| Current Rating | 6.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 460pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS6630A Datasheet
Download the complete datasheet for Rochester Electronics FDS6630A to view detailed technical specifications.
No datasheet is available for this part.