The FDS6676AS is a N-Channel Junction Field-Effect Transistor with a continuous drain current rating of 14.5A and a drain to source breakdown voltage of 30V. It has a drain to source resistance of 7mR and a power dissipation of 2.5W. The device is packaged in a SO-8 package and is lead free. It is compliant with Reach SVHC regulations.
PackageSO
Power2.5W
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Technical Specifications
Rochester Electronics FDS6676AS technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 14.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7mR |
| Gate to Source Voltage (Vgs) | 16V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | Yes |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS6676AS Datasheet
Download the complete datasheet for Rochester Electronics FDS6676AS to view detailed technical specifications.
No datasheet is available for this part.