The FDS9953A is a 30V N-Channel MOSFET with a continuous drain current of 2.9mA and a current rating of -2.9A. It features a drain to source resistance of 95mR and a power dissipation of 2W. The device is packaged in a SO-8 package and is lead free. It is compliant with Reach SVHC regulations and has an input capacitance of 185pF.
PackageSOIC
Current Rating-2.9A
Power2W
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Technical Specifications
Rochester Electronics FDS9953A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.9mA |
| Current Rating | -2.9A |
| Drain to Source Resistance | 95mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 185pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 2W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS9953A Datasheet
Download the complete datasheet for Rochester Electronics FDS9953A to view detailed technical specifications.
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