The MMBV105GLT1 is a silicon variable capacitance diode from Rochester Electronics. It features a breakdown voltage of 30V and a maximum power dissipation of 0.225W. The diode has a 3-pin TO-236AB package and is suitable for use in a variety of applications. Operating temperature range is not specified.
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Technical Specifications
Rochester Electronics MMBV105GLT1 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | VARIABLE CAPACITANCE DIODE |
| Breakdown Voltage-Min | 30 |
| Power Dissipation-Max | 0.225 |
Compliance
| RoHS | No |
| Lead Free | No |
| REACH | unknown |
| Military Spec | False |
Datasheet
Rochester Electronics MMBV105GLT1 Datasheet
Download the complete datasheet for Rochester Electronics MMBV105GLT1 to view detailed technical specifications.
No datasheet is available for this part.