Rochester Electronics
MMBV105GLT1G
UHF BAND, 2.15pF, 30V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
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Technical Specifications
Rochester Electronics MMBV105GLT1G technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | VARIABLE CAPACITANCE DIODE |
| Breakdown Voltage-Min | 30 |
| Power Dissipation-Max | 0.225 |
Compliance
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Rochester Electronics MMBV105GLT1G Datasheet
Download the complete datasheet for Rochester Electronics MMBV105GLT1G to view detailed technical specifications.
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