Dual N/P-channel MOSFET transistor designed for efficient switching applications. Features continuous drain current ratings of 3 A for one channel and 3.9 A for the other, with a maximum drain-source voltage of 20 V. This 8-pin ChipFET package is supplied on tape and reel for automated assembly.
Quick Jump:
Technical Specifications
Rochester Electronics NTHC5513T1G technical specifications.
General
| Packaging | Tape and Reel |
Compliance
| RoHS | Compliant |
Datasheet
Rochester Electronics NTHC5513T1G Datasheet
Download the complete datasheet for Rochester Electronics NTHC5513T1G to view detailed technical specifications.
No datasheet is available for this part.