This silicon transient voltage suppressor diode features a breakdown voltage of 11.1V and a maximum breakdown voltage of 12.3V. It has a maximum non-repetitive peak reverse power dissipation of 500mW and a maximum power dissipation of 3W. The diode is available in a 2-pin axial package, making it suitable for surface mount applications.
PolarityUNIDIRECTIONAL
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Technical Specifications
Rochester Electronics SA10AG technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 10 |
| Breakdown Voltage-Min | 11.1 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Breakdown Voltage-Max | 12.3 |
| Power Dissipation-Max | 3 |
Compliance
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Rochester Electronics SA10AG Datasheet
Download the complete datasheet for Rochester Electronics SA10AG to view detailed technical specifications.
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