The SI4532DY is a 30V N-Channel MOSFET with a continuous drain current of 3.9A and a drain to source breakdown voltage of 30V. It is packaged in a lead-free SOIC package and is rated for a power dissipation of 2W. The device is compliant with Reach SVHC regulations and is available in bulk packaging.
PackageSOIC
Current Rating3.9A
Power2W
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Technical Specifications
Rochester Electronics SI4532DY technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.9A |
| Current Rating | 3.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 2W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics SI4532DY Datasheet
Download the complete datasheet for Rochester Electronics SI4532DY to view detailed technical specifications.
No datasheet is available for this part.