PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and 60V collector-base voltage (VCBO). Offers a continuous collector current of -150mA and a maximum power dissipation of 150mW. Operates within a temperature range of -55°C to 150°C. Packaged in a compact SOT-723 surface-mount case with a 140MHz transition frequency.
Frequency140MHz
PackageSOT-723
Current Rating-150mA
MountingSurface Mount
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Technical Specifications
Rohm 2SA2029T2LQ technical specifications.
General
Package/Case
SOT-723
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
-50V
Collector-emitter Voltage-Max
500mV
Contact Plating
Copper, Tin
Continuous Collector Current
-150mA
Current Rating
-150mA
Emitter Base Voltage (VEBO)
-6V
Gain Bandwidth Product
140MHz
Height
0.5mm
hFE Min
120
Lead Free
Lead Free
Length
1.2mm
Max Breakdown Voltage
50V
Max Collector Current
150mA
Max Frequency
140MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Package Quantity
8000
Packaging
Tape and Reel
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
140MHz
DC Rated Voltage
-50V
Width
0.8mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SA2029T2LQ Datasheet
Download the complete datasheet for Rohm 2SA2029T2LQ to view detailed technical specifications.
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