
PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage and 1A maximum DC collector current. This single-element transistor offers a maximum power dissipation of 2000mW and a minimum DC current gain of 180. Operates within a temperature range of -55°C to 150°C, with a typical transition frequency of 400MHz. Packaged in a 4-pin (3+Tab) MPT lead-frame SMT with flat leads.
Rohm 2SAR513P technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package/Case | MPT |
| Lead Shape | Flat |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.7(Max) |
| Package Width (mm) | 2.7(Max) |
| Seated Plane Height (mm) | 1.5(Max) |
| Pin Pitch (mm) | 1.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 50V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 2000mW |
| Minimum DC Current Gain | 180@50mA@2V |
| Maximum Transition Frequency | 400(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S5518 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Rohm 2SAR513P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.