PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -1A. Operates with a transition frequency of 150MHz and a minimum hFE of 82. Packaged in a surface-mount SC-62 (SOT-89) case with 3 pins. RoHS compliant and designed for operation between -55°C and 150°C.
Frequency150MHz
PackageSOT-89
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Rohm 2SB1132T100Q technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 82 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -32V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SB1132T100Q Datasheet
Download the complete datasheet for Rohm 2SB1132T100Q to view detailed technical specifications.
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