PNP Silicon Bipolar Junction Transistor, surface mountable in a TO-243AA (SC-62) 3-pin package. Features a maximum collector current of 1A, collector-emitter breakdown voltage of 32V, and a transition frequency of 150MHz. Offers a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C. This lead-free, RoHS-compliant component is supplied on tape and reel.
Frequency150MHz
PackageTO-243AA
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Rohm 2SB1132T100R technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 82 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -32V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SB1132T100R Datasheet
Download the complete datasheet for Rohm 2SB1132T100R to view detailed technical specifications.
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