The 2SB1189T100Q is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 700mA. It has a maximum power dissipation of 2W and is packaged in a TO-243AA surface mount package. The transistor operates over a temperature range of -55°C to 150°C and has a gain bandwidth product of 120MHz. It is lead-free and suitable for use in high-frequency applications.
PackageTO-243AA
Current Rating-700mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Rohm 2SB1189T100Q technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | -700mA |
| Current Rating | -700mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 700mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SB1189T100Q Datasheet
Download the complete datasheet for Rohm 2SB1189T100Q to view detailed technical specifications.
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