The 2SB1238TV2Q is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It has a gain bandwidth product of 120MHz and a transition frequency of 100MHz. The transistor is rated for a maximum power dissipation of 1W and has a maximum operating temperature of 150°C. It is packaged in a through-hole package and is lead-free and RoHS compliant.
Current Rating-700mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Rohm 2SB1238TV2Q technical specifications.
General
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -700mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SB1238TV2Q Datasheet
Download the complete datasheet for Rohm 2SB1238TV2Q to view detailed technical specifications.
No datasheet is available for this part.