PNP Bipolar Junction Transistor (BJT) with a 50V Collector-Emitter Voltage (VCEO) and a 3A Current Rating. Features a -60V Collector Base Voltage (VCBO) and a -5V Emitter Base Voltage (VEBO). Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 120MHz. Maximum power dissipation is 1W, with operation from -55°C to 150°C. Through-hole mounting and lead-free construction.
Current Rating-3A
MountingThrough Hole
PolarityPNP
Power1W
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Technical Specifications
Rohm 2SB1243TV2Q technical specifications.
General
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 70MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 700mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SB1243TV2Q Datasheet
Download the complete datasheet for Rohm 2SB1243TV2Q to view detailed technical specifications.
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