The 2SB1243TV2R is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 1A. It has a power dissipation of 1W and is packaged in a through-hole package. The transistor operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. It has a gain bandwidth product of 70MHz and a minimum current gain of 180.
Current Rating-3A
MountingThrough Hole
PolarityPNP
Power1W
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Technical Specifications
Rohm 2SB1243TV2R technical specifications.
General
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 70MHz |
| hFE Min | 180 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SB1243TV2R Datasheet
Download the complete datasheet for Rohm 2SB1243TV2R to view detailed technical specifications.
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