
PNP Silicon Bipolar Junction Transistor, surface mount, MPT3 package (SC-62, 3-pin). Features a maximum collector current of 5A and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 82 and a transition frequency of 120MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. RoHS compliant and lead-free.
Rohm 2SB1386T100Q technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Copper, Tin |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 82 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SB1386T100Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
