PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -3A and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 240MHz. Packaged in a surface-mount TO-243AA (MPT3, SC-62) with 3 pins, copper/tin plating, and is RoHS compliant. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW.
PackageTO-243AA
Current Rating-3A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Rohm 2SB1424T100R technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | -20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | -3A |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 240MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 240MHz |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SB1424T100R Datasheet
Download the complete datasheet for Rohm 2SB1424T100R to view detailed technical specifications.
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