PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -1.5A. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 280MHz. Packaged in an SC-59 surface-mount (SMD/SMT) case with 3 pins, measuring 2.9mm x 1.6mm x 1mm. RoHS compliant and lead-free.
Frequency280MHz
PackageSMD/SMT
Current Rating-1.5A
MountingSurface Mount
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Technical Specifications
Rohm 2SB1695KT146 technical specifications.
General
Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
-30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-200mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
370mV
Contact Plating
Copper, Tin, Silver
Continuous Collector Current
-1.5A
Current Rating
-1.5A
Emitter Base Voltage (VEBO)
-6V
Frequency
280MHz
Gain Bandwidth Product
280MHz
Height
1mm
hFE Min
270
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
30V
Max Collector Current
1.5A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
280MHz
DC Rated Voltage
-30V
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SB1695KT146 Datasheet
Download the complete datasheet for Rohm 2SB1695KT146 to view detailed technical specifications.
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