
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V collector-emitter breakdown voltage and a continuous collector current of 3A. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 200MHz. Packaged in a TSMT3 (TO-236-3) surface-mount package with 3 pins. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Rohm 2SB1708TL technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -180mV |
| Collector-emitter Voltage-Max | 250mV |
| Contact Plating | Copper, Tin, Silver |
| Continuous Collector Current | -3A |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 200MHz |
| Height | 0.9mm |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -30V |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SB1708TL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
