NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 400V Collector-Emitter Breakdown Voltage (VCEO) and a 100mA Max Collector Current (IC). Operates with a minimum hFE of 82 and a transition frequency of 20MHz. Packaged in a TO-243AA surface mount case, this component offers a wide operating temperature range from -55°C to 150°C and a maximum power dissipation of 2W.
Rohm 2SC4505T100P technical specifications.
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 20MHz |
| hFE Min | 82 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 20MHz |
| DC Rated Voltage | 400V |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SC4505T100P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.