
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 5A. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 120MHz. Packaged in a TO-252-3 (SC-63) surface-mount case with copper and tin plating. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. This component is RoHS compliant.
Rohm 2SC5103TLQ technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | 5A |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 80MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 120MHz |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SC5103TLQ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
