NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) of 150mA. Operates with a gain bandwidth product (fT) of 180MHz and a maximum power dissipation of 150mW. Packaged in a compact SOT-723 surface-mount case with copper and tin plating. RoHS compliant and lead-free.
Frequency180MHz
PackageSOT-723
Current Rating150mA
MountingSurface Mount
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Technical Specifications
Rohm 2SC5658T2LR technical specifications.
General
| Package/Case | SOT-723 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | 150mA |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| Height | 0.5mm |
| hFE Min | 180 |
| Lead Free | Lead Free |
| Length | 1.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Frequency | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| DC Rated Voltage | 50V |
| Width | 0.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SC5658T2LR Datasheet
Download the complete datasheet for Rohm 2SC5658T2LR to view detailed technical specifications.
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