NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) of 150mA. Operates with a gain bandwidth product (fT) of 180MHz and a maximum power dissipation of 150mW. Packaged in a compact SOT-723 surface-mount case with copper and tin plating. RoHS compliant and lead-free.
Frequency180MHz
PackageSOT-723
Current Rating150mA
MountingSurface Mount
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Technical Specifications
Rohm 2SC5658T2LR technical specifications.
General
Package/Case
SOT-723
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
400mV
Contact Plating
Copper, Tin
Continuous Collector Current
150mA
Current Rating
150mA
Emitter Base Voltage (VEBO)
7V
Frequency
180MHz
Gain Bandwidth Product
180MHz
Height
0.5mm
hFE Min
180
Lead Free
Lead Free
Length
1.2mm
Max Breakdown Voltage
50V
Max Collector Current
150mA
Max Frequency
180MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
180MHz
DC Rated Voltage
50V
Width
0.8mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SC5658T2LR Datasheet
Download the complete datasheet for Rohm 2SC5658T2LR to view detailed technical specifications.
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