NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 120 and a transition frequency (fT) of 300MHz. Packaged in a compact SOT-323 surface-mount UMT3 case, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Rohm 2SC5876T106Q technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Copper, Tin, Silver |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SC5876T106Q to view detailed technical specifications.
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