NPN Silicon Bipolar Junction Transistor (BJT) for general-purpose switching and amplification. Features a 32V Collector-Emitter Breakdown Voltage (VCEO) and a 2A Continuous Collector Current (IC). Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 100MHz. Packaged in a TO-252-3 (SC-63) surface-mount package with copper and tin plating. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-252-3
Current Rating2A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm 2SD1758TLQ technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 800mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 32V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SD1758TLQ Datasheet
Download the complete datasheet for Rohm 2SD1758TLQ to view detailed technical specifications.
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