NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 50V collector-emitter breakdown voltage and a 3A maximum collector current. Offers a 90MHz transition frequency and a minimum hFE of 82. Packaged in a TO-252-3 (SC-63) case with copper and tin plating, this RoHS compliant component operates from -55°C to 150°C.
Frequency90MHz
PackageTO-252-3
Current Rating3A
MountingSurface Mount
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Technical Specifications
Rohm 2SD1760TLQ technical specifications.
General
Package/Case
TO-252-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
1V
Contact Plating
Copper, Tin
Current Rating
3A
Emitter Base Voltage (VEBO)
5V
Frequency
90MHz
Gain Bandwidth Product
90MHz
Height
2.3mm
hFE Min
82
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
50V
Max Collector Current
3A
Max Frequency
90MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
15W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
15W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
90MHz
DC Rated Voltage
50V
Width
5.5mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SD1760TLQ Datasheet
Download the complete datasheet for Rohm 2SD1760TLQ to view detailed technical specifications.
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