NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V collector-emitter breakdown voltage and a 2A maximum collector current. Offers a transition frequency of 100MHz and a minimum hFE of 120. Packaged in a TO-243AA (SC-62) surface-mount case with 3 pins. Operates across a temperature range of -55°C to 150°C with a 2W power dissipation.
Frequency100MHz
PackageTO-243AA
Current Rating2A
MountingSurface Mount
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Technical Specifications
Rohm 2SD1766T100Q technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 800mV |
| Contact Plating | Copper, Tin |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 32V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SD1766T100Q Datasheet
Download the complete datasheet for Rohm 2SD1766T100Q to view detailed technical specifications.
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