NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V collector-emitter breakdown voltage and a 2A maximum collector current. Offers a transition frequency of 100MHz and a minimum hFE of 120. Packaged in a TO-243AA (SC-62) surface-mount case with 3 pins. Operates across a temperature range of -55°C to 150°C with a 2W power dissipation.
Frequency100MHz
PackageTO-243AA
Current Rating2A
MountingSurface Mount
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Technical Specifications
Rohm 2SD1766T100Q technical specifications.
General
Package/Case
TO-243AA
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
32V
Collector Emitter Voltage (VCEO)
32V
Collector-emitter Voltage-Max
800mV
Contact Plating
Copper, Tin
Current Rating
2A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
hFE Min
120
Lead Free
Lead Free
Max Breakdown Voltage
32V
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2W
Radiation Hardening
No
Transition Frequency
100MHz
DC Rated Voltage
32V
Compliance
RoHS
Compliant
Datasheet
Rohm 2SD1766T100Q Datasheet
Download the complete datasheet for Rohm 2SD1766T100Q to view detailed technical specifications.
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