NPN Silicon Bipolar Junction Transistor for surface mount applications. Features 80V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a maximum power dissipation of 200mW and a transition frequency of 120MHz. Packaged in SC-59 with copper, tin, silver plating. Operates from -55°C to 150°C and is RoHS compliant.
Frequency100MHz
PackageSMD/SMT
Current Rating500mA
MountingSurface Mount
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Technical Specifications
Rohm 2SD1782KT146R technical specifications.
General
Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Copper, Tin, Silver
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
120MHz
Height
1mm
hFE Min
120
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
80V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
120MHz
DC Rated Voltage
80V
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SD1782KT146R Datasheet
Download the complete datasheet for Rohm 2SD1782KT146R to view detailed technical specifications.
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