NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features 80V Collector-Emitter Breakdown Voltage (VCEO) and 1A Continuous Collector Current (IC). Operates with a 100MHz Gain Bandwidth Product and 2W Power Dissipation. Packaged in a 3-pin SOT-89 (MPT3, SC-62) surface-mount case, this RoHS compliant component offers a minimum hFE of 82 and a Collector-Emitter Saturation Voltage of 400mV.
Frequency100MHz
PackageSOT-89
Current Rating1A
MountingSurface Mount
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Technical Specifications
Rohm 2SD1898T100R technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
400mV
Contact Plating
Copper, Tin
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.4mm
hFE Min
82
Lead Free
Lead Free
Length
4.7mm
Max Breakdown Voltage
80V
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
100MHz
DC Rated Voltage
80V
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SD1898T100R Datasheet
Download the complete datasheet for Rohm 2SD1898T100R to view detailed technical specifications.
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