
NPN silicon bipolar junction transistor for surface mount applications. Features a 100V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) of 2A. Offers a maximum power dissipation of 1W and a gain bandwidth product (fT) of 80MHz. Packaged in SC-63 (SOT-428) with copper/tin plating, this RoHS compliant component operates from -55°C to 150°C.
Rohm 2SD1980TL technical specifications.
| Package/Case | SOT-428 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 80MHz |
| Height | 2.3mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 80MHz |
| DC Rated Voltage | 100V |
| Width | 5.5mm |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SD1980TL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
