NPN silicon bipolar junction transistor for surface mount applications. Features a 100V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) of 2A. Offers a maximum power dissipation of 1W and a gain bandwidth product (fT) of 80MHz. Packaged in SC-63 (SOT-428) with copper/tin plating, this RoHS compliant component operates from -55°C to 150°C.
PackageSOT-428
Current Rating2A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm 2SD1980TL technical specifications.
General
Package/Case
SOT-428
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.5V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.5V
Contact Plating
Copper, Tin
Continuous Collector Current
2A
Current Rating
2A
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
80MHz
Height
2.3mm
hFE Min
1000
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
100V
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
80MHz
DC Rated Voltage
100V
Width
5.5mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SD1980TL Datasheet
Download the complete datasheet for Rohm 2SD1980TL to view detailed technical specifications.
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