NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum continuous collector current of 500mA and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 820 and a transition frequency of 350MHz. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 200mW. Packaged in SC-59 with 3 pins, supplied on tape and reel.
Rohm 2SD2114KT146V technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 180mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Copper, Tin, Silver |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 12V |
| Gain Bandwidth Product | 350MHz |
| hFE Min | 820 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 350MHz |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SD2114KT146V to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
