NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a 1.5A Continuous Collector Current. Offers a 330MHz Gain Bandwidth Product and a minimum hFE of 270. Packaged in a compact SC-59 (3-pin) SMD/SMT format with a maximum power dissipation of 200mW. Operates from -55°C to 150°C and is RoHS compliant.
Frequency330MHz
PackageSMD/SMT
Current Rating1.5A
MountingSurface Mount
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Technical Specifications
Rohm 2SD2657KT146 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 160mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 350mV |
| Contact Plating | Copper, Tin, Silver |
| Continuous Collector Current | 1.5A |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 330MHz |
| Gain Bandwidth Product | 330MHz |
| Height | 1mm |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.5A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 330MHz |
| DC Rated Voltage | 30V |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SD2657KT146 Datasheet
Download the complete datasheet for Rohm 2SD2657KT146 to view detailed technical specifications.
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