NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a 1.5A Continuous Collector Current. Offers a 330MHz Gain Bandwidth Product and a minimum hFE of 270. Packaged in a compact SC-59 (3-pin) SMD/SMT format with a maximum power dissipation of 200mW. Operates from -55°C to 150°C and is RoHS compliant.
Frequency330MHz
PackageSMD/SMT
Current Rating1.5A
MountingSurface Mount
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Technical Specifications
Rohm 2SD2657KT146 technical specifications.
General
Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
160mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
350mV
Contact Plating
Copper, Tin, Silver
Continuous Collector Current
1.5A
Current Rating
1.5A
Emitter Base Voltage (VEBO)
6V
Frequency
330MHz
Gain Bandwidth Product
330MHz
Height
1mm
hFE Min
270
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
30V
Max Collector Current
1.5A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
330MHz
DC Rated Voltage
30V
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SD2657KT146 Datasheet
Download the complete datasheet for Rohm 2SD2657KT146 to view detailed technical specifications.
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