NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of 2A and a collector-emitter breakdown voltage of 12V. Offers a gain bandwidth product of 300MHz and a maximum power dissipation of 800mW. Packaged in a compact SMD/SMT TUMT3, surface mountable format with copper and tin contact plating. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency300MHz
PackageSMD/SMT
Current Rating2A
MountingSurface Mount
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Technical Specifications
Rohm 2SD2701TL technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 140mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 350mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 0.77mm |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 2A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 12V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SD2701TL Datasheet
Download the complete datasheet for Rohm 2SD2701TL to view detailed technical specifications.
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