NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of 2A and a collector-emitter breakdown voltage of 12V. Offers a gain bandwidth product of 300MHz and a maximum power dissipation of 800mW. Packaged in a compact SMD/SMT TUMT3, surface mountable format with copper and tin contact plating. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency300MHz
PackageSMD/SMT
Current Rating2A
MountingSurface Mount
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Technical Specifications
Rohm 2SD2701TL technical specifications.
General
Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
15V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Saturation Voltage
140mV
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
350mV
Contact Plating
Copper, Tin
Continuous Collector Current
2A
Current Rating
2A
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
0.77mm
hFE Min
270
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
12V
Max Collector Current
2A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
800mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
12V
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SD2701TL Datasheet
Download the complete datasheet for Rohm 2SD2701TL to view detailed technical specifications.
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