NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 1A maximum collector current, 30V collector-emitter breakdown voltage, and 120mV collector-emitter saturation voltage. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 320MHz. Packaged in a compact TUMT3 (SMD/SMT) with dimensions of 2.1mm (L) x 1.8mm (W) x 0.82mm (H). Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 800mW. RoHS compliant.
Frequency100MHz
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm 2SD2703TL technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 120mV |
| Collector-emitter Voltage-Max | 350mV |
| Contact Plating | Copper, Tin |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 320MHz |
| Height | 0.82mm |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Length | 2.1mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 320MHz |
| Width | 1.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SD2703TL Datasheet
Download the complete datasheet for Rohm 2SD2703TL to view detailed technical specifications.
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