NPN bipolar junction transistor designed for small signal applications. Features a 45V collector-emitter breakdown voltage and a 200mA continuous collector current. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 125MHz. Packaged in a SOT-23 surface-mount case, this silicon transistor operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Rohm BCX70JT116 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 550mV |
| Collector Emitter Voltage (VCEO) | 350mV |
| Collector-emitter Voltage-Max | 550mV |
| Contact Plating | Copper, Tin, Silver |
| Continuous Collector Current | 200mA |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 125MHz |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 125MHz |
| DC Rated Voltage | 45V |
| RoHS | Compliant |
Download the complete datasheet for Rohm BCX70JT116 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
