PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. Operates within a temperature range of -55°C to 150°C with a power dissipation of 200mW. This silicon transistor is supplied in a 3-pin SC-59 package, suitable for surface mounting and available on tape and reel. RoHS compliant.
PackageSMD/SMT
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Rohm DTA114GKAT146 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -100mA |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm DTA114GKAT146 Datasheet
Download the complete datasheet for Rohm DTA114GKAT146 to view detailed technical specifications.
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