PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector Emitter Breakdown Voltage (VCEO) and a continuous collector current of -100mA. Offers a minimum hFE of 80 and a transition frequency of 250MHz. Packaged in an EMT3 (SOT-416) surface mount case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 150mW.
Rohm DTA123JETL technical specifications.
| Package/Case | SOT-416 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
Download the complete datasheet for Rohm DTA123JETL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
