PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -100mA. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 250MHz. Packaged in SC-59, this 3-pin silicon transistor operates from -55°C to 150°C with a maximum power dissipation of 200mW. RoHS compliant and lead-free.
PackageSMD/SMT
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Rohm DTA123JKAT146 technical specifications.
General
Package/Case
SMD/SMT
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
-50V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
-100mA
Current Rating
-100mA
Height
1.1mm
hFE Min
80
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
100mA
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Channels
1
Operating Supply Voltage
50V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
250MHz
DC Rated Voltage
-50V
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Rohm DTA123JKAT146 Datasheet
Download the complete datasheet for Rohm DTA123JKAT146 to view detailed technical specifications.
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