
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 100mA. Operates with a -50V DC rated voltage and offers a minimum hFE of 100. Packaged in an SC-59, 3-pin surface mount (SMD/SMT) configuration, suitable for tape and reel packaging. RoHS compliant with a maximum power dissipation of 200mW and a transition frequency of 250MHz.
Rohm DTA143TKAT146 technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | -50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | -50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
Download the complete datasheet for Rohm DTA143TKAT146 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
