
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector Emitter Breakdown Voltage and -50V Collector Emitter Voltage (VCEO). Offers a continuous collector current of -100mA and a minimum hFE of 80. Packaged in a 3-pin UMT3 (SC-70) surface mount case, this RoHS compliant silicon transistor operates from -55°C to 150°C with a maximum power dissipation of 200mW.
Rohm DTA143ZUAT106 technical specifications.
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | -50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
Download the complete datasheet for Rohm DTA143ZUAT106 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
