PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a collector-emitter breakdown voltage of 40V and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Designed for surface mount (SMD/SMT) with a maximum power dissipation of 200mW. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSMD/SMT
Current Rating-500mA
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Rohm DTB123TKT146 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | -40V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 500mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm DTB123TKT146 Datasheet
Download the complete datasheet for Rohm DTB123TKT146 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.