The DTC114ESATP is a NPN transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 50mA. It has a maximum power dissipation of 300mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in an in-line, R-PSIP-T3 package and is available in quantities of 5000. It is RoHS compliant and not radiation hardened.
MountingThrough Hole
PolarityNPN
Power300mW
Quick Jump:
Technical Specifications
Rohm DTC114ESATP technical specifications.
General
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 50mA |
| hFE Min | 30 |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
Compliance
| RoHS | Compliant |
Datasheet
Rohm DTC114ESATP Datasheet
Download the complete datasheet for Rohm DTC114ESATP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
