NPN silicon bipolar junction transistor for surface mount applications. Features a 50V collector-emitter breakdown voltage and a continuous collector current of 100mA. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 250MHz. This RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 200mW, packaged in tape and reel.
PackageSMD/SMT
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm DTC114GKAT146 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm DTC114GKAT146 Datasheet
Download the complete datasheet for Rohm DTC114GKAT146 to view detailed technical specifications.
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