NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 150mW. Packaged in an EMT3 (SOT-416) surface-mount package, supplied on tape and reel. RoHS compliant.
PackageSOT-416
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm DTC114TETL technical specifications.
General
| Package/Case | SOT-416 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm DTC114TETL Datasheet
Download the complete datasheet for Rohm DTC114TETL to view detailed technical specifications.
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